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12 papers
Manufacturing, processing, testing of materials and structures
Current–voltage, capacitance–voltage–temperature, and dlts studies of Ni|6H-SiC Schottky diode
A. Rabehiab,
B. Akkala,
M. Amrania,
S. Tizia,
Z. Benamaraa,
H. Helala,
A. Douarab,
B. Nailb,
A. Zianea a Laboratoire de Micro-électronique Appliquée.Université Djillali Liabès Sidi Bel Abbès, BP 89, 22000, Sidi Bel Abbés, Algeria
b Institute of Science and Technology, Tissemsilt University Center,
38000 Tissemsilt, Algeria
Abstract:
In this paper, we give a systematical description of Ni|6H-SiC Schottky diode by current–voltage
$I(V)$ characteristics at room temperature and capacitance–voltage
$C(V)$ characteristics at various frequencies (10–800 kHz) and various temperatures (77–350 K). The
$I(V)$ characteristics show a double-barrier phenomenon, which gives a low and high barrier height (
$\phi_{bn}^{\operatorname{L}}$ = 0.91 eV,
$\phi_{bn}^{\operatorname{H}}$ = 1.55 eV), with a difference of
$\Delta\phi_{bn}$ = 0.64 eV. Also, low ideality factor
$n^{\operatorname{L}}$ = 1.94 and high ideality factor
$n^{\operatorname{H}}$ = 1.22 are obtained. The
$C$–
$V$–
$T$ measurements show that the barrier height
$\phi_{bn}$ decreases with decreasing of temperature and gives a temperature coefficient
$\alpha$ = 1.0
$\times$ 10
$^{-3}$ eV/K and
$\phi_{bn}$ (
$T$ = 0 K) = 1.32 eV. Deep-level transient spectroscopy (DLTS) has been used to investigate deep levels in the Ni|6H-SiC Schottky diode. The traps signatures such as activation energies
$E_\alpha$ = 0.50
$\pm$ 0.07 eV, capture cross-section
$\sigma$ = 1.8
$\times$ 10
$^{-20}$ cm
$^2$, and defect concentration
$N_T$ = 6.2
$\times$ 10
$^{13}$ cm
$^{-3}$ were calculated from Arrhenius plots.
Keywords:
silicon carbide, Schottky diodes, I–V, $C$–$V$–$T$, deep-level transient spectroscopy (DLTS). Received: 12.10.2020
Revised: 12.10.2020
Accepted: 10.12.2020
Language: English
Fulltext:
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