Semiconductor physics

Improvement in electrical and 2DEG properties of Al$_{0.26}$Ga$_{0.74}$N|GaN|Si HEMTs

F. Jabli^ab, S. Dhouibi^cd, M. Gassoumi<sup>be

a</sup> Laboratory of Micro-Optoelectroniques et Nanostructures, University of Monastir, 5019, Monastir, Tunisia
^b Department of Physics, College of Sciences, Qassim University, 51452, Buryadh, Saudi Arabia
^c Laboratory of physics of condensed Matter and Nanosciences, University of Monastir, 5019 Monastir, Tunisia
^d Department of Physics, College of Science and Arts Al-Mithnab, Qassim University, Al-Mithnab 51931, Saudi Arabia
^e Research unit of advanced materials and nanotechnology, University of Kairouan, PO Box 471, 1200 Kasserine, Tunisia

Abstract: Improving material quality is essential for obtaining a high-power device. Surface trapping effects have been present in all HEMT devices, and have significantly impacted the problem of drain-current collapse. In this paper, performance of intentionally non-doped AlGaN|GaN|Si (HEMTs) before and after passivation with SiO$_2$|SiN is investigated. Capacitance-voltage at various temperatures ($C$–$V$–$T$), a drain current–voltage at various gate voltages $(I_{\mathrm{ds}}-V_{\mathrm{ds}}-V_{\mathrm{gs}})$, the gate leakage current with various temperatures $(I_{\mathrm{gs}}-V_{\mathrm{gs}}-T)$, and the maximum extrinsic transconductance $G_{\operatorname{max}}$ are measured; all of these measurements show the impact of SiO$_2$|SiN passivation on the performances of AlGaN|GaN|Si HEMTs.

Keywords: AlGaN|GaN|Si HEMTs, passivation by SiO$_2$, SiN, C–V–T, I$_{ds}$–V$_{ds}$–V$_{gs}$, I$_{gs}$–V$_{gs}$–T, $G_{\operatorname{max}}$.

Received: 09.08.2020
Revised: 09.08.2020
Accepted: 08.10.2020

Language: English

 English version: Semiconductors, 2021, 55:3, 379–383