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Non-electronic properties of semiconductors (atomic structure, diffusion)
Character of interaction in the SnSb$_{2}$Te$_{4}$–SnBi$_{2}$Te$_{4}$ system and the thermoelectric properties of (SnSb$_{2}$Te$_{4}$)$_{1-x}$(SnBi$_{2}$Te$_{4}$)$_{x}$ solid solutions
G. R. Gurbanov,
M. B. Adygezalova Azerbaijan State University of Oil and Industry, Baku
Abstract:
For the first time, the character of the interaction of components along the cut of SnSb
$_{2}$Te
$_{4}$–SnBi
$_{2}$Te
$_{4}$ is studied by various physicochemical methods in a wide temperature range, and the phase diagrams are plotted. The cut is found to be a quasi-binary cross section of the SnTe–Sb
$_{2}$Te
$_{3}$–Bi
$_{2}$Te
$_{3}$ quasi-ternary system. The cut contains the quaternary compound SnSbBiTe
$_4$, which melts congruently at 900 K. Single crystals of the quaternary compound SnSbBiTe
$_4$ are obtained by the method of chemical transport reactions. X-ray analysis is used to determine the unit-cell parameters
$a$ = 4.356
$\mathring{\mathrm{A}}$ and
$c$ = 41.531
$\mathring{\mathrm{A}}$ of single crystals of the quaternary compounds. It is found that the compound crystallizes in the tetradymite lattice of rhombohedral syngony, space group R
$\bar3$m, the charge is
$z$ = 3, and the unit-cell volume is
$V$ = 682.43
$\mathring{\mathrm{A}}^3$. The thermoelectric parameters of (SnSb
$_{2}$Te
$_{4}$)
$_{1-x}$(SnBi
$_{2}$Te
$_{4}$)
$_{x}$ are measured in the temperature range of 300–600 K. It is found that the thermoelectric figure of merit increased with the SnBi
$_{2}$Te
$_{4}$ content in the solid solutions. The thermoelectric efficiency of (SnSb
$_{2}$Te
$_{4}$)
$_{1-x}$(SnBi
$_{2}$Te
$_{4}$)
$_{x}$ with
$x$ = 1.0 has a peak value of
$Z$ = 3.1
$\times$ 10
$^{-3}$ K
$^{-1}$ at 300 K.
Keywords:
(SnSb$_{2}$Te$_{4}$)$_{1-x}$(SnBi$_{2}$Te$_{4}$)$_{x}$ solid solutions, quaternary compounds, quasi-ternary system, state diagram, phase equilibrium, electrical conductivity, Seebeck coefficient, thermal conductivity. Received: 04.02.2021
Revised: 15.02.2021
Accepted: 15.02.2021
DOI:
10.21883/FTP.2021.06.50911.9624
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