Abstract:
The method of mathematical simulation is used to examine the influence exerted by the characteristics of the epitaxial structure and contact grid of photovoltaic laser-power converters on their ohmic loss. The maximum attainable photoconverter efficiency at a Gaussian distribution of the laser-beam intensity on the surface of a photovoltaic converter and at dark-current densities of $p$–$n$ junctions typical of structures grown by the metal-organic vapor-phase epitaxy (MOVPE) technique are determined. An approach to finding the optimal parameters of GaAs and In$_{0.24}$Ga$_{0.76}$As/GaAs photovoltaic converters in relation to the optical power being converted is suggested, and the structural parameters for incident-power values of 5, 20, and 50 W at wavelengths of 809 and 1064 nm are determined. It is found that, at laser-light intensities of up to 5 W, $>$ 60% efficiency can be achieved in laser-light conversion at a wavelength of 809 nm and $>$ 55% efficiency, at a wavelength of 1064 nm.
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