This article is cited in 42 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Vertical heterostructures based on graphene and other 2D materials

I. V. Antonova<sup>ab

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University

Abstract: Recent advances in the fabrication of vertical heterostructures based on graphene and other dielectric and semiconductor single-layer materials, including hexagonal boron nitride and transition-metal dichalcogenides, are reviewed. Significant progress in this field is discussed together with the great prospects for the development of vertical heterostructures for various applications, which are associated, first of all, with reconsideration of the physical principles of the design and operation of device structures based on graphene combined with other 2D materials.

Received: 01.04.2015
Accepted: 02.04.2015

 English version: Semiconductors, 2016, 50:1, 66–82

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