This article is cited in 11 papers

Non-electronic properties of semiconductors (atomic structure, diffusion)

On a combined approach to studying the correlation parameters of self-organizing structures

A. V. Alpatov, S. P. Vikhrov, N. V. Vishnyakov, S. M. Mursalov, N. B. Rybin, N. V. Rybina

Ryazan State Radio Engineering University

Abstract: The correlation parameters of self-organizing structures are investigated using a combined approach, a combination of 2D detrended fluctuation analysis and the average-mutual-information method. The self-organizing structures to be investigated are model surfaces with different degrees of ordering (ordered, disordered, and mixed) and amorphous hydrogenated silicon and tetrahedral carbon films. It is demonstrated using test structures that the correlation vectors determined by kinks on the scale dependence of the fluctuation function with the use of the 2D detrended fluctuation analysis coincide with sufficient accuracy with specified periods of surface harmonic components. It is more expedient to study disordered structures using the average-mutual-information method. The physical meaning of maximum mutual information is shown to characterize the information capacity of a system. The combined approach allows the correlation parameters of combined systems to be investigated most comprehensively.

Received: 06.04.2015
Accepted: 06.04.2015

 English version: Semiconductors, 2016, 50:1, 22–28

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