This article is cited in 1 paper

Semiconductor structures, low-dimensional systems, quantum phenomena

Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures

I. A. Aleksandrov^a, K. S. Zhuravlev^b, V. G. Mansurov<sup>a

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University

Abstract: The influence of defects in the AlN barrier on photoluminescence decay after pulse excitation is studied for structures with GaN quantum dots in an AlN matrix. For these quantum-dot structures, it is found that the initial part of the decay curves corresponds to fast photoluminescence decay. Comparison of the photoluminescence-decay curves for the GaN/AlN quantum-dot structures and AlN layers without quantum dots shows that fast decay is defined by the contribution of the photoluminescence band related to defects in the AlN matrix.

Keywords: Sapphire Substrate, Pulse Energy Density, Beam Equivalent Pressure, Excitation Photon Energy, Photoluminescence Kinetic.

Received: 12.05.2015
Accepted: 18.05.2015

 English version: Semiconductors, 2016, 50:2, 191–194

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