This article is cited in 4 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Two stages of surface-defect formation in a MOS structure under low-dose rate $\gamma$ irradiation

V. D. Popov

National Engineering Physics Institute "MEPhI", Moscow

Abstract: The results of an experimental study of how surface defects are formed at the Si–SiO$_2$ interface at $\gamma$-radiation dose rates of $P$ = 0.1 and 1.0 rad/s are reported. It is found that the surface defects are formed in two stages. The defect-formation mechanisms are analyzed.

Keywords: Dose Rate, Surface Defect, Exponential Dependence, Gate Oxide, Threshold Time.

Received: 11.06.2015
Accepted: 17.06.2015

 English version: Semiconductors, 2016, 50:3, 349–351

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