Semiconductor structures, low-dimensional systems, quantum phenomena

Layer-by-layer analysis of the thickness distribution of silicon dioxide in the structure SiO$_{2}$/Si(111) by inelastic electron scattering cross-section spectroscopy

A. S. Parshin^a, S. A. Kushchenkov^a, O. P. Pchelyakov^b, Yu. L. Mikhlin<sup>c

a</sup> M. F. Reshetnev Siberian State Aerospace University, Krasnoyarsk, Russia
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^c Institute of Chemistry and Chemical Technology SB RAS, Krasnoyarsk

Abstract: The SiO$_2$-concentration profile in the structure SiO$_2$/Si(111) is determined from experimental spectra of the cross section for the inelastic scattering of reflected electrons in the primary electron energy range from 300 to 3000 eV. The spectra are analyzed with the use of a proposed algorithm and developed computer program for simulating the spectra of the cross section for the inelastic scattering of reflected electrons for layered structures with an arbitrary number of layers, arbitrary thickness, and variable concentration of components in each layer. The best agreement between the calculated and experimental spectra is attained by varying the silicon dioxide and silicon concentrations in each layer. The results obtained can be used for profiling film-substrate structures with an arbitrary composition.

Keywords: Inelastic Scattering, Component Distribution, Inelastic Electron, Incident Electron Energy, Inelastic Scatter.

Received: 15.07.2015
Accepted: 09.09.2015

 English version: Semiconductors, 2016, 50:3, 339–344

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