This article is cited in 7 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Electrical and photoelectric properties of the TiN/$p$-InSe heterojunction

I. G. Orletskii, M. I. Ilashschuk, V. V. Brus, P. D. Mar'yanchuk, M. M. Solovan, Z. D. Kovalyuk

Chernivtsi National University named after Yuriy Fedkovych

Abstract: The conditions for fabricating photosensitive TiN/$p$-InSe heterojunctions by the reactive-magnetron sputtering of thin titanium-nitride films onto freshly cleaved $p$-InSe single-crystal substrates is investigated. The presence of a tunnel-transparent high-resistivity In$_{2}$Se$_{3}$ layer at the heterojunction is revealed from analysis of the I–V characteristics, and the effect of this layer on the electrical properties and photosensitivity spectra of the heterostructures is analyzed. The dominant current transport mechanisms through the TiN/$p$-InSe energy barrier under forward and reverse bias are determined.

Keywords: Versus Characteristic, Reverse Bias, Spectral Dependence, Energy Diagram, Photoelectric Property.

Received: 13.07.2015
Accepted: 09.09.2015

 English version: Semiconductors, 2016, 50:3, 334–338

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