This article is cited in 4 papers

Manufacturing, processing, testing of materials and structures

Specific features of doping with antimony during the ion-beam crystallization of silicon

A. S. Pashchenko^a, S. N. Chebotarev^a, L. S. Lunin^a, V. A. Irkha<sup>b

a</sup> Southern Research Center of the Russian Academy of Sciences, Rostov-on-Don
^b Special Engineering and Technology Department "Inversiya" Ltd., Rostov-on-Don, Russia

Abstract: A method of doping during the growth of thin films by ion-beam crystallization is proposed. By the example of Si and Sb, the possibility of controllably doping semiconductors during the ion-beam crystallization process is shown. A calibrated temperature dependence of the antimony vapor flow rate in the range from 150 to 400$^\circ$C is obtained. It is established that, an increase in the evaporator temperature above 200$^\circ$C brings about the accumulation of impurities in the layer growth direction. Silicon layers doped with antimony to a concentration of 10$^{18}$ cm$^{-3}$ are grown. It is shown that, as the evaporator temperature is increased, the efficiency of the activation of antimony in silicon nonlinearly decreases from $\sim$100 to $\sim$10$^{-3}$.

Keywords: Antimony, Control Doping, Evaporator Temperature, Resistive Evaporator, Dopant Concentration Profile.

Received: 08.09.2015
Accepted: 16.09.2015

 English version: Semiconductors, 2016, 50:4, 545–548

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