Semiconductor structures, low-dimensional systems, quantum phenomena

Impact ionization in nonuniformly heated silicon $p^{+}$–$n$–$n^{+}$- and $n^{+}$–$p$–$p^{+}$ structures

A. M. Musaev

Daghestan Institute of Physics after Amirkhanov, Makhachkala, Russia

Abstract: Experimental results on the effects of changes in the impact-ionization current in silicon diffusion $p^{+}$–$n$–$n^{+}$- and $n^{+}$–$p$–$p^{+}$ structures upon nonuniform heating are presented. It is shown that the revealed effects are associated with the transformation of band energy levels caused by thermoelastic stresses of the structures.

Keywords: Thermoelastic Stress, Nonuniform Heating, Ionization Coefficient, Avalanche Breakdown, Phosphorus Diffusion.

Received: 06.04.2015
Accepted: 21.09.2015

 English version: Semiconductors, 2016, 50:4, 462–465

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