M. V. Virko, V. S. Kogotkov, A. A. Leonidov, V. V. Voronenkov, Yu. T. Rebane, A. S. Zubrilov, R. I. Gorbunov, F. E. Latyshev, N. I. Bochkareva, Yu. S. Lelikov, D. V. Tarkhin, A. N. Smirnov, V. Yu. Davydov, Yu. G. Shreter, “On the laser detachment of $n$-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in $n^+$-GaN substrates”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 5,Pages 711

This article is cited in 5 papers

Manufacturing, processing, testing of materials and structures

On the laser detachment of $n$-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in $n^+$-GaN substrates

M. V. Virko^a, V. S. Kogotkov^a, A. A. Leonidov^a, V. V. Voronenkov^b, Yu. T. Rebane^b, A. S. Zubrilov^b, R. I. Gorbunov^b, F. E. Latyshev^b, N. I. Bochkareva^b, Yu. S. Lelikov^b, D. V. Tarkhin^b, A. N. Smirnov^b, V. Yu. Davydov^b, Yu. G. Shreter^b

^a Peter the Great St. Petersburg Polytechnic University
^b Ioffe Institute, St. Petersburg

Abstract: The physical and technological basics of the method used to lift off lightly and moderately doped $n$-GaN films from heavily doped $n^+$-GaN substrates are considered. The detachment method is based on the free-charge-carrier absorption of IR laser light, which is substantially higher in $n^+$-GaN films.

Keywords: Device Structure, Free Charge Carrier, Gallium Nitride, Sacrificial Layer, Liquid Gallium.

Received: 22.10.2015
Accepted: 26.10.2015