Spectroscopy, interaction with radiation

Stimulated emission from a metamorphic GaAsSb bulk layer on a GaAs substrate

V. Ya. Aleshkin^ab, A. A. Dubinov^ab, K. E. Kudryavtsev^ab, P. A. Yunin^ab, M. N. Drozdov^ab, O. V. Vikhrova^c, S. M. Nekorkin^c, B. N. Zvonkov<sup>c

a</sup> Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod
^c Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: The structural and optical properties of a metamorphic GaAsSb bulk layer grown on a GaAs substrate are studied. As the excitation power density (at a wavelength of 0.65 $\mu$m) reaches 9 kW cm$^{-2}$ at liquid-nitrogen temperature and 230 kW cm$^{-2}$ at room temperature, a superluminescence signal is observed at wave-lengths of 0.943 and 0.992 $\mu$m, respectively.

Keywords: GaAs, GaSb, GaAs Substrate, Waveguide Layer, Stimulate Emission.

Received: 27.10.2015
Accepted: 03.11.2015

 English version: Semiconductors, 2016, 50:5, 586–589

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