This article is cited in 2 papers

Semiconductor physics

Dependence of the conductivity on the active-region thickness in GaAs thin-film Schottky diodes

S. A. Zuev, G. V. Kilessa, E. E. Asanov, V. V. Starostenko, S. V. Pokrova

V. I. Vernadsky Crimean Federal University, Simferopol

Abstract: The dependences of the electrical characteristics of thin-film structures with Schottky barrier on gallium arsenide are studied using Monte Carlo numerical simulation in the kinetic approximation with the main scattering mechanisms taken into account. The dependences of the diode conductivity on the voltage and channel thickness are obtained. It is shown that the relation between the diode voltage and conductivity changes at a small channel thickness, which is explained by barrier field expulsion to the substrate.

Received: 10.11.2015
Accepted: 10.11.2015

 English version: Semiconductors, 2016, 50:6, 810–814

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