This article is cited in 3 papers

Micro- and nanocrystalline, porous, composite semiconductors

Inter atomic force constants of binary and ternary tetrahedral semiconductors

Suresh Pal^a, R. K. Tiwari^a, D. C. Gupta^a, Vibhav K. Saraswat^b, A. S. Verma<sup>b

a</sup> Department of Physics, Jiwaji University, Gwalior, India
^b Department of Physics, Banasthali Vidyapith, Rajasthan, India

Abstract: In this paper, we present the expressions relating the inter atomic force constants like as bond-stretching force constant ($\alpha$ in $N/m$) and bond-bending force constant ($\beta$ in $N/m$) for the binary (zinc blende structure) and ternary (chalcopyrite structure) semiconductors with the product of ionic charges (PIC) and crystal ionicity ($f_{i}$). Interatomic force constants of these compounds exhibit a linear relationship; when plot a graph between Interatomic force constants and the nearest neighbor distance $d$ ($\mathring{\mathrm{A}}$) with crystal ionicity ($f_{i}$), but fall on different straight lines according to the product of ionic charges of these compounds. A fairly good agreement has been found between the observed and calculated values of the $\alpha$ and $\beta$ for binary and ternary tetrahedral semiconductors.

Received: 16.06.2015
Accepted: 12.11.2015

Language: English

 English version: Semiconductors, 2016, 50:6, 795–800

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