This article is cited in 2 papers

Electronic properties of semiconductors

Anomalous thermoelectric power in Hg$_{3}$In$_{2}$Te$_{6}$ crystals

O. G. Grushka

Chernivtsi National University named after Yuriy Fedkovych

Abstract: Based on data on the Hall coefficient, it is shown that the existence of potential barriers in the region of impurity conductivity of highly compensated Hg$_{3}$In$_{2}$Te$_{6}$ crystals is possible. The role of barriers in the anomalous behavior of transport phenomena is discussed qualitatively. Extremely large values of the thermoelectric power are related to the combination of thermoelectric powers of contact potentials for regions with different concentrations of electrons.

Received: 03.11.2015
Accepted: 18.11.2015

 English version: DOI: 10.1134/S1063782616060075

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