This article is cited in 7 papers

Electronic properties of semiconductors

Optical properties of In$_{2}$Se$_{3}$ thin films

I. V. Bondar'

Belarussian State University of Computer Science and Radioelectronic Engineering

Abstract: In$_{2}$Se$_{3}$ films are produced by ion-beam evaporation at substrate temperatures of 313 and 623 K. As the target, In$_{2}$Se$_{3}$ single crystals grown by the vertical Bridgman method are used. The composition and structure of the crystals and films are determined by the X-ray spectral analysis and X-ray diffraction techniques, respectively. It is established that the crystals and films crystallize with the formation of a hexagonal structure. The band gap and refractive index of the In$_{2}$Se$_{3}$ films are determined from the transmittance and reflectance spectra. It is found that, as the substrate temperature is increased, the band gap increases.

Received: 08.10.2015
Accepted: 17.11.2015

 English version: Semiconductors, 2016, 50:6, 715–718

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