This article is cited in 3 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth

V. V. Romanov, P. A. Dementev, K. D. Moiseev

Ioffe Institute, St. Petersburg

Abstract: Indium-antimonide quantum dots (7–9 $\times$ 10$^9$ cm$^2$) are produced on an InAs(001) substrate by metal-organic vapor-phase epitaxy at a temperature of $T$ = 440$^\circ$C. Epitaxial deposition occurred simultaneously onto an InAs binary matrix and an InAsSbP quaternary alloy matrix layer lattice-matched to the InAs substrate in terms of the lattice parameter. Transformation of the quantum-dot shape and size is studied in relation to the chemical composition of the working matrix surface, onto which the quantum dots are deposited. The use of a multicomponent layer makes it possible to control the lattice parameter of the matrix and the strains produced in the system during the formation of self-assembled quantum dots.

Received: 10.12.2015
Accepted: 17.12.2015

 English version: Semiconductors, 2016, 50:7, 910–914

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