This article is cited in 3 papers

Non-electronic properties of semiconductors (atomic structure, diffusion)

Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium

P. V. Seredin^a, A. V. Fedyukin^a, I. N. Arsent'ev^b, L. S. Vavilova^b, I. S. Tarasov^b, Tatiana Prutskij^c, Harald Leiste^d, Monika Rinke<sup>d

a</sup> Voronezh State University
^b Ioffe Institute, St. Petersburg
^c Instituto de Ciencias, Benemérita Universidad Autónoma de Puebla, Mexico
^d Karlsruhe Nano Micro Facility, Germany

Abstract: The aim of this study is to explore the structural and optical properties of single-crystal GaAs(100) doped with Cr atoms by burning them into the substrate at high temperatures. The diffusion of chromium into single-crystal GaAs(100) substrates brings about the formation of a thin ($\sim$20–40 $\mu$m) GaAs:Cr transition layer. In this case, chromium atoms are incorporated into the gallium-arsenide crystal lattice and occupy the regular atomic sites of the metal sublattice. As the chromium diffusion time is increased, such behavior of the dopant impurity yields changes in the energy structure of GaAs, a decrease in the absorption at free charge carriers, and a lowering of the surface recombination rate. As a result, the photoluminescence signal from the sample is significantly enhanced.

Received: 29.12.2015
Accepted: 11.01.2016

 English version: Semiconductors, 2016, 50:7, 853–859

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