This article is cited in 6 papers

Manufacturing, processing, testing of materials and structures

On a two-layer Si$_{3}$N$_{4}$/SiO$_{2}$ dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

S. S. Arutyunyan^ab, A. Yu. Pavlov^a, V. Yu. Pavlov^a, K. N. Tomosh^a, Yu. V. Fedorov<sup>a

a</sup> Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow
^b Institute of Microelectronics Technology and High-Purity Materials RAS

Abstract: The fabrication of a two-layer Si$_{3}$N$_{4}$/SiO$_{2}$ dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si$_{3}$N$_{4}$/SiO$_{2}$ mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 $\Omega$ mm and a smooth surface and edge morphology.

Received: 21.01.2016
Accepted: 01.02.2016

 English version: Semiconductors, 2016, 50:8, 1117–1121

Bibliographic databases:

•