This article is cited in 1 paper

Manufacturing, processing, testing of materials and structures

Estimation of the efficiency of the introduction of a porous layer into a silicon-on-sapphire structure substrate to enhance the reliability of devices under irradiation

P. A. Aleksandrov, E. K. Baranova, V. V. Budaragin

National Research Centre "Kurchatov Institute", Moscow

Abstract: We investigate the efficiency of the introduction of a porous layer into the substrate of a silicon-onsapphire structure by the implantation of He ions to enhance the radiation resistance of devices. The properties of the introduced layer and its parameters affecting the concentration of minority charge carriers generated by irradiation are analyzed. The reported results of the analysis and calculations can be used to optimize He-ion implantation conditions during the formation of a porous layer.

Received: 23.12.2015
Accepted: 11.01.2016

 English version: Semiconductors, 2016, 50:8, 1107–1111

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