This article is cited in 2 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects

I. A. Aleksandrov^a, V. G. Mansurov^a, K. S. Zhuravlev<sup>ab

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University

Abstract: The carrier recombination dynamics in an ensemble of GaN/AlN quantum dots is studied. The model proposed for describing this dynamics takes into account the transition of carriers between quantum dots and defects in a matrix. Comparison of the experimental and calculated photoluminescence decay curves shows that the interaction between quantum dots and defects slows down photoluminescence decay in the ensemble of GaN/AlN quantum dots.

Received: 26.01.2016
Accepted: 02.02.2016

 English version: Semiconductors, 2016, 50:8, 1038–1042

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