This article is cited in 3 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Conduction in titanium dioxide films and metal–TiO$_{2}$–Si structures

V. M. Kalygina, I. M. Egorova, I. A. Prudaev, O. P. Tolbanov

Tomsk State University

Abstract: The effect of the annealing of titanium oxide films on the electrical properties of metal–TiO$_{2}$–$n$-Si structures is investigated. It is shown that, regardless of the annealing temperature, the conductivity of the structures at positive gate potentials is determined by the space-charge-limited current in the insulator with traps exponentially distributed in terms of energy. At negative gate potentials, the main contribution to the current is provided by the generation of electron–hole pairs in the space-charge region in silicon. The properties of the TiO$_{2}$/$n$-Si interface depend on the structure and phase state of the oxide film, which are determined by the annealing temperature.

Received: 29.10.2015
Accepted: 11.01.2016

 English version: Semiconductors, 2016, 50:8, 1015–1019

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