This article is cited in 1 paper

Electronic properties of semiconductors

Temperature dependence of the hall coefficient in the Вi$_{1-x}$Sb$_{x}$ system ($x$ = 0.06, 0.12)

B. A. Tairov, H. A. Gasanova, R. I. Selim-zade

Abdullaev Institute of Physics, National Academy of Sciences of Azerbaijan, Baku, Azerbaijan

Abstract: The temperature dependences of the Fermi level, concentrations of charge carriers, and their effective mass ratio in the Вi$_{1-x}$Sb$_{x}$ system ($x$ = 0.06, 0.12) are determined on the basis of quantitative analysis of the temperature dependence of the Hall coefficient in the temperature range of 77–300 K.

Received: 01.12.2015
Accepted: 17.12.2015

 English version: Semiconductors, 2016, 50:8, 996–1000

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