Manufacturing, processing, testing of materials and structures

Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates

P. V. Seredin^a, D. L. Goloshchapov^a, A. S. Len'shin^a, A. N. Lukin^a, A. V. Fedyukin^a, I. N. Arsent'ev^b, A. D. Bondarev^b, Ya. V. Lubyanskiy^b, I. S. Tarasov<sup>b

a</sup> Voronezh State University
^b Ioffe Institute, St. Petersburg

Abstract: Nanostructured aluminum-nitride films are formed by reactive ion-plasma sputtering onto GaAs substrates with different orientations. The properties of the films are studied via structural analysis, atomic force microscopy, and infrared and visible–ultraviolet spectroscopy. The aluminum-nitride films can have a refractive index in the range of 1.6–4.0 at a wavelength of $\sim$250 nm and an optical band gap of $\sim$5 eV. It is shown that the morphology, surface composition, and optical characteristics of AlN/GaAs heterophase systems can be controlled using misoriented GaAs substrates.

Received: 02.03.2016
Accepted: 03.03.2016

 English version: Semiconductors, 2016, 50:9, 1261–1272

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