V. G. Shengurov, V. Yu. Chalkov, S. A. Denisov, S. A. Matveev, A. V. Nezhdanov, A. I. Mashin, D. O. Filatov, M. V. Stepikhova, Z. F. Krasil'nik, “Conditions of growth of high-quality relaxed Si$_{1-x}$Ge$_{x}$ layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 9,Pages 1270

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Manufacturing, processing, testing of materials and structures

Conditions of growth of high-quality relaxed Si$_{1-x}$Ge$_{x}$ layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire

V. G. Shengurov^a, V. Yu. Chalkov^a, S. A. Denisov^a, S. A. Matveev^b, A. V. Nezhdanov^b, A. I. Mashin^b, D. O. Filatov^a, M. V. Stepikhova^bc, Z. F. Krasil'nik^bc

^a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod
^c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The conditions of the epitaxial growth of high-quality relaxed Si$_{1-x}$Ge$_{x}$ layers by the combined method of the sublimation molecular-beam epitaxy and vapor-phase decomposition of monogermane on a hot wire are considered. The combined growth procedure proposed provides a means for growing Si$_{1-x}$Ge$_{x}$ layers with a thickness of up to 2 $\mu$m and larger. At reduced growth temperatures ($T_{S}\approx$ 325–350$^\circ$C), the procedure allows the growth of Si$_{1-x}$Ge$_{x}$ layers with a small surface roughness (rms $\approx$ 2 nm) and a low density of threading dislocations. The photoluminescence intensity of Si$_{1-x}$Ge$_{x}$ :Er layers is significantly (more than five times) higher than the photoluminescence intensity of layers produced under standard growth conditions ($T_{S}\approx$ 500$^\circ$C) and possess an external quantum efficiency estimated at a level of $\sim$0.4%.

Received: 25.02.2016
Accepted: 10.03.2016