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Fizika i Tekhnika Poluprovodnikov, 2016 Volume 50, Issue 9, Pages 1242–1246 (Mi phts6369)

This article is cited in 50 papers

Semiconductor physics

Photovoltaic laser-power converter based on AlGaAs/GaAs heterostructures

V. P. Khvostikov, N. A. Kalyuzhnyy, S. A. Mintairov, S. V. Sorokina, N. S. Potapovich, V. M. Emelyanov, N. Kh. Timoshina, V. M. Andreev

Ioffe Institute, St. Petersburg

Abstract: Photovoltaic laser-power converters for a wavelength of $\lambda$ = 809 nm are developed and fabricated on the basis of single-junction AlGaAs/GaAs structures grown by metal-organic vapor-phase epitaxy. The parameters of the photovoltaic structure constituted by an optical “window” and a cladding layer are optimized by mathematical simulation. Photovoltaic converters with areas of $S$ = 10.2 and 12.2 mm$^2$ and 4 cm$^2$ are fabricated and studied. For photocells with $S$ = 10.2 mm$^2$, the monochromatic efficiency $(\eta)$ was 60% at a current density of 5.9 A/cm$^2$. A photovoltaic module with a working voltage of 4 V ($\eta$ = 56.3% at 0.34 A/cm$^2$) is assembled.

Received: 02.02.2016
Accepted: 09.02.2016


 English version:
Semiconductors, 2016, 50:9, 1220–1224

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