This article is cited in 2 papers

Electronic properties of semiconductors

Low-temperature conductivity of gadolinium sulfides

S. N. Mustafaeva^a, S. M. Asadov<sup>b

a</sup> Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
^b Institute of Catalysis and Inorganic Chemistry, Azerbaijan National Academy of Sciences, Baku

Abstract: In samples of GdS$_{x}$ ($x$ = 1.475–2) of various compositions, the conductivity temperature dependences are investigated for the case of direct current in the low-temperature region (4.2–225 K). The presence of the activation and activationless hopping mechanisms of charge transport over the band gap of the samples of GdS$_{x}$ phases is established. The parameters of localized states in GdS$_{x}$ are determined.

Received: 26.01.2016
Accepted: 04.02.2016

 English version: Semiconductors, 2016, 50:9, 1137–1140

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