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Fizika i Tekhnika Poluprovodnikov, 2016 Volume 50, Issue 10, Pages 1370–1373 (Mi phts6341)

Semiconductor physics

Mechanism of microplasma turn-off upon the avalanche breakdown of silicon $p$$n$ structures

A. M. Musaev

Daghestan Institute of Physics after Amirkhanov, Makhachkala, Makhachkala, Russia

Abstract: A possible mechanism for natural-microplasma turn-off in silicon $p$$n$ junctions is studied. It is shown that the turn-off effect is not a random process, but is based on a certain physical mechanism. The mechanism is associated with the formation of graded-gap regions caused by thermoelastic stresses and electric- field redistribution in the microplasma region.

Received: 31.03.2016
Accepted: 04.04.2016


 English version:
Semiconductors, 2016, 50:10, 1352–1355

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