This article is cited in 1 paper

Semiconductor physics

Effect of the chemical composition of Cu–In–Ga–Se layers on the photoconductivity and conversion efficiency of CdS/CIGSe solar cells

G. F. Novikov^a, Wei-Tao Tsai^b, K. V. Bocharov^a, E. V. Rabenok^a, Ming-Jer Jeng^b, Liann-Be Chang^b, Wu-Shiung Feng^a, Jian-Ping Ao^c, Yun Sun<sup>c

a</sup> Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
^b Department of Electronic Engineering, Chang Gung University, Taoyuan, Taiwan
^c Institute of Photoelectronic Thin Film Device and Technology, Nankai University, Tianjin, PR China

Abstract: The effect of the [Ga]/[In+Ga] ratio of gallium and indium on the microwave photoconductivity of Cu–In–Ga–Se (CIGSe) films and on the efficiency of solar cells fabricated in accordance with the same technology is investigated. According to the observations of a field-emission scanning electron microscopy (FESEM), the grain size decreases with increasing Ga content. With increasing gallium content in the samples, the photogenerated-electron lifetime and the activation energy of the microwave photoconductivity also decrease. The changes in the activation energy of the through conduction in darkness are less than 20%. Analysis of the obtained data shows that the known effect of the gallium gradient on the efficiency should be associated with modification of the internal structure of grains instead of with their boundaries.

Received: 21.03.2016
Accepted: 28.03.2016

 English version: Semiconductors, 2016, 50:10, 1344–1351

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