This article is cited in 10 papers

Semiconductor physics

GaSb laser-power ($\lambda$ = 1550 nm) converters: Fabrication method and characteristics

V. P. Khvostikov, S. V. Sorokina, O. A. Khvostikova, R. V. Levin, B. V. Pushnii, N. Kh. Timoshina, V. M. Andreev

Ioffe Institute, St. Petersburg

Abstract: Photovoltaic converters of laser light with a wavelength of $\lambda$ = 1550 nm are developed using liquidphase epitaxy (LPE), metal-organic chemical-vapor deposition (MOCVD), and diffusion from the gas phase into the $n$-GaSb substrate. Photocells with an area of S of 4, 12.2, and 100 mm$^2$ are fabricated and tested. The characteristics of the samples produced by different methods are compared. The monochromatic efficiency is found to be 38.7% for the best converters (with $S$ = 12.2 mm$^2$) at a laser power of 1.4 W.

Received: 17.02.2016
Accepted: 25.02.2016

 English version: Semiconductors, 2016, 50:10, 1338–1343

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