Electronic properties of semiconductors

Energy spectrum of charge carriers in TlIn$_{1-x}$Yb$_{x}$Te$_{2}$ solid solutions

F. F. Aliev^a, U. M. Agaeva^b, M. M. Zarbaliev<sup>b

a</sup> Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
^b Sumqayit State University

Abstract: The temperature dependences of the electrical conductivity $\sigma(T)$, the Hall coefficient $R(T)$, and the thermoelectric coefficient $\alpha(T)$ are investigated in TlIn$_{1-x}$Yb$_{x}$Te$_{2}$ (0 $\le x\le$ 0.10) solid solutions at 80–1000K. From the kinetic parameters, the effective masses of electrons and holes are determined. The obtained experimental data on $\sigma(T)$ and $\alpha(T)$ are interpreted within the context of a model with one and two types of charge carriers. It is established that, since $x$ = 0.05, the TlIn$_{1-x}$Yb$_{x}$Te$_{2}$ solid solutions belong to the class of narrow-gap semiconductors that have high matrix elements of interaction.

Received: 27.01.2015
Accepted: 16.09.2015

 English version: Semiconductors, 2016, 50:10, 1273–1279

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