D. G. Pavel'ev, A. P. Vasil'ev, V. A. Kozlov, Yu. I. Koschurinov, E. S. Obolenskaya, S. V. Obolensky, V. M. Ustinov, “Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 11,Pages <nobr>1548

This article is cited in 3 papers

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range

D. G. Pavel'ev^a, A. P. Vasil'ev^b, V. A. Kozlov^ac, Yu. I. Koschurinov^a, E. S. Obolenskaya^a, S. V. Obolensky^a, V. M. Ustinov^d

^a Lobachevsky State University of Nizhny Novgorod
^b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
^c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^d Ioffe Institute, St. Petersburg

Abstract: The electron transport in superlattices based on GaAs/AlAs heterostructures with a small number of periods (6 periods) is calculated by the Monte Carlo method. These superlattices are used in terahertz diodes for the frequency stabilization of quantum cascade lasers in the range up to 4.7 THz. The band structure of superlattices with different numbers of AlAs monolayers is considered and their current–voltage characteristics are calculated. The calculated current–voltage characteristics are compared with the experimental data. The possibility of the efficient application of these superlattices in the THz frequency range is established both theoretically and experimentally.

Received: 27.04.2016
Accepted: 10.05.2016