A. M. Mozharov, D. A. Kudriashov, A. D. Bolshakov, G. E. Cirlin, A. S. Gudovskikh, I. S. Mukhin, “Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 11,Pages <nobr>1543

This article is cited in 8 papers

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Numerical simulation of the properties of solar cells based on GaPNAs/Si heterostructures and GaN nanowires

A. M. Mozharov^a, D. A. Kudriashov^a, A. D. Bolshakov^a, G. E. Cirlin^ab, A. S. Gudovskikh^ac, I. S. Mukhin^ab

^a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^b St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^c Saint Petersburg Electrotechnical University "LETI"

Abstract: Using methods of numerical simulation, the modes of operation are considered and structures are determined for solar cells of combined dimension based on a planar GaPNAs/Si heterostructure and an array of GaN nanowires. It is shown that the array of GaN nanowires features antireflective properties at a level no lower than 2.5% under illumination with the AM1.5D solar spectrum. The efficiency of solar cells is affected to the greatest extent by the lifetimes of minority charge carriers and the thickness of photoactive layers. It is demonstrated that the efficiency of two-junction solar cells composed of GaPNAs alloy layers and an array of GaN nanowires on a Si substrate can be as high as 32% for AM1.5D.

Received: 27.04.2016
Accepted: 10.05.2016