This article is cited in 1 paper

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Anisotropy of the magnetocapacitance of structures based on PbSnTe : In/BaF$_{2}$ films

A. E. Klimov, V. S. Epov

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The angular dependences of the capacitance of structures based on PbSnTe:In films in a magnetic field $B\le$ 4 T at various bias voltages, which have a distinct anisotropic pattern in the magnetic-field direction with capacitance modulation approximately by a factor of 1.5–2, are studied experimentally at $T$ = 4.2 K. The data obtained are compared with the experimental anisotropic angular dependences of the space-charge-limited current with current modulation up to a factor of 10$^2$–10$^4$ or greater. A qualitative model of the results obtained is considered.

Received: 27.04.2016
Accepted: 10.05.2016

 English version: Semiconductors, 2016, 50:11, 1479–1487

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