XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Terahertz absorption and emission upon the photoionization of acceptors in uniaxially stressed silicon

R. Kh. Zhukavin^a, K. A. Kovalevsky^a, M. L. Orlov^a, V. V. Tsyplenkov^a, H.-W. Hübers^bc, N. Dessmann^c, D. V. Kozlov^a, V. N. Shastin<sup>da

a</sup> Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b DLR Institute of Optical Sensor Systems, Berlin, Germany
^c Humboldt-Universität zu Berlin, Institut für Physik, Berlin, Germany
^d Lobachevsky State University of Nizhny Novgorod

Abstract: Experimental data on the spontaneous emission and absorption modulation in boron-doped silicon under CO$_2$ laser excitation depending on the uniaxial stress applied along the [001] and [011] crystallographic directions are presented. Room-temperature radiation is used as the probe radiation. Low stress (less than 0.5 kbar) is shown to reduce losses in the terahertz region by 20%. The main contribution to absorption modulation at zero and low stress is made by $A^+$ centers. Intersubband free hole transitions additionally contribute to terahertz absorption at higher stress. These contributions can be minimized by compensation.

Received: 27.04.2016
Accepted: 10.05.2016

 English version: Semiconductors, 2016, 50:11, 1458–1462

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