This article is cited in 3 papers

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

V. M. Daniltsev^a, E. V. Demidov^a, M. N. Drozdov^ab, Yu. N. Drozdov^ab, S. A. Kraev^a, E. A. Surovegina^a, V. I. Shashkin^ba, P. A. Yunin<sup>ab

a</sup> Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod

Abstract: The capabilities of GaAs epitaxial layers extremely heavily doped with tellurium by metal-organic vapor-phase epitaxy using diisopropyl telluride as a source are studied. It is shown that tellurium incorporation into GaAs occurs to an atomic concentration of $\sim$10$^{21}$ cm$^{-3}$ without appreciable diffusion and segregation effects. Good carrier concentrations (2 $\times$ 10$^{19}$ cm$^{-3}$) and specific contact resistances of non-alloyed ohmic contacts (1.7 $\times$ 10$^{-6}$ $\Omega$ cm$^{2}$) give grounds to use such layers to create non-alloyed ohmic contacts in electronic devices. A sharp decrease in the electrical activity of Te atoms, a decrease in the electron mobility, and an increase in the contact resistance at atomic concentrations above 2 $\times$ 10$^{20}$ cm$^{-3}$ are detected.

Received: 27.04.2016
Accepted: 10.05.2016

 English version: Semiconductors, 2016, 50:11, 1439–1442

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