XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Polarization of the induced THz emission of donors in silicon

K. A. Kovalevsky^a, R. Kh. Zhukavin^a, V. V. Tsyplenkov^a, S. G. Pavlov^b, H.-W. Hübers^bc, N. V. Abrosimov^d, V. N. Shastin<sup>a

a</sup> Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Humboldt University, Berlin, Germany
^c DLR Institute of Optical Sensor Systems, Germany
^d Leibniz Institute for Crystal Growth, Berlin, Germany

Abstract: The polarization of the terahertz (4.9–6.4 THz) stimulated emission of Group-V (Sb, P, As, Bi) donors in single-crystal silicon under pumping (photoionization) by a CO$_2$ laser (photon energy 117 meV), depending on the uniaxial compressive deformation of the crystal along the [100] axis, is experimentally investigated. The influence of the field direction of the pump wave on its efficiency is discussed.

Received: 27.04.2016
Accepted: 10.05.2016

 English version: Semiconductors, 2016, 50:12, 1673–1677

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