V. S. Varavin, V. V. Vasilyev, A. A. Guzev, S. A. Dvoretskii, A. P. Kovchavtsev, D. V. Marin, I. V. Sabinina, Yu. G. Sidorov, G. Yu. Sidorov, A. V. Tsarenko, M. V. Yakushev, “CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 12,Pages <nobr>1652

This article is cited in 4 papers

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures

V. S. Varavin, V. V. Vasilyev, A. A. Guzev, S. A. Dvoretskii, A. P. Kovchavtsev, D. V. Marin, I. V. Sabinina, Yu. G. Sidorov, G. Yu. Sidorov, A. V. Tsarenko, M. V. Yakushev

Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: The parameters of multilayer Cd$_{x}$Hg$_{1-x}$Te heterostructures for photodetectors operating at wavelengths of up to 5 $\mu$m, grown by molecular-beam epitaxy (MBE) on silicon substrates, are studied. The passivating properties of thin CdTe layers on the surface of these structures are analyzed by measuring the $C$–$V$ characteristics. The temperature dependences of the minority carrier lifetime in the photoabsorption layer after growth and thermal annealing are investigated. Samples of $p^{+}$–$n$-type photodiodes are fabricated by the implantation of arsenic ions into $n$-type layers, doped with In to a concentration of (1–5) $\times$ 10$^{15}$ см$^{-3}$. The temperature dependences of the reverse currents are measured at several bias voltages; these currents turn out to be almost two orders of magnitude lower than those for $n^{+}$–$p$-type diodes.

Received: 27.04.2016
Accepted: 10.05.2016