E. A. Surovegina, E. V. Demidov, M. N. Drozdov, A. V. Murel, O. I. Khrykin, V. I. Shashkin, M. A. Lobaev, A. M. Gorbachev, A. L. Vikharev, S. A. Bogdanov, V. A. Isaev, A. B. Muchnikov, V. V. Chernov, D. B. Radishev, D. E. Batler, “Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron”, Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 12,Pages <nobr>1595

This article is cited in 2 papers

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016

Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron

E. A. Surovegina^a, E. V. Demidov^a, M. N. Drozdov^a, A. V. Murel^a, O. I. Khrykin^a, V. I. Shashkin^a, M. A. Lobaev^b, A. M. Gorbachev^b, A. L. Vikharev^b, S. A. Bogdanov^b, V. A. Isaev^b, A. B. Muchnikov^b, V. V. Chernov^b, D. B. Radishev^b, D. E. Batler^b

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^b Institute of Applied Physics, Russian Academy of Sciences, Nizhny Novgorod

Abstract: The results of analysis of the atomic composition, doping level, and hole mobility in epitaxial diamond layers when doped with boron are reported. The layers are produced by chemical-vapor deposition. The possibilities of uniform doping with boron to a level in the range 5 $\times$ 10$^{17}$ to $\sim$10$^{20}$ at cm$^{-3}$ and of $\delta$ doping to the surface concentration (0.3–5) $\times$ 10$^{13}$ at cm$^{-3}$ are shown. The conditions for precision ion etching of the structures are determined, and barrier and ohmic contacts to the layers are formed.

Received: 27.04.2016
Accepted: 10.05.2016