This article is cited in 3 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth

S. V. Sitnikov^a, S. S. Kosolobov^ab, A. V. Latyshev<sup>ac

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Skolkovo Institute of Science and Technology, Moscow, Russia
^c Novosibirsk State University

Abstract: The process of two-dimensional island nucleation at the surface of ultra large Si (111) during hightemperature epitaxial growth is studied by in situ ultrahigh-vacuum reflection electron microscopy. The critical terrace size $(D_{\operatorname{crit}})$, at which a two-dimensional island is nucleated in the center, is measured in the temperature range 900–1180$^\circ$C at different silicon fluxes onto the surface. It is found that the parameter $D_{\operatorname{crit}}^2$ is a power function of the frequency of island nucleation, with the exponent $\chi=(0.9\pm0.05)$ in the entire temperature range under study. It is established that the kinetics of nucleus formation is defined by the diffusion of adsorbed silicon atoms at temperatures of up to 1180$^\circ$C and the minimum critical nucleus size corresponds to 12 silicon atoms.

Received: 19.05.2016
Accepted: 31.05.2016

DOI: 10.21883/FTP.2017.02.44107.8332

 English version: Semiconductors, 2017, 51:2, 203–206

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