R. A. Aliev, G. M. Gadjiev, M. M. Gadzhialiev, A. M. Ismailov, Z. Sh. Pirmagomedov, “Specific features of the capacitance–voltage characteristics of a Cu–SiO$_2$–$p$-InSb MIS structure”, Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 3,Pages 383

Semiconductor physics

Specific features of the capacitance–voltage characteristics of a Cu–SiO$_2$–$p$-InSb MIS structure

R. A. Aliev^a, G. M. Gadjiev^a, M. M. Gadzhialiev^a, A. M. Ismailov^ab, Z. Sh. Pirmagomedov^a

^a Daghestan Institute of Physics after Amirkhanov, Makhachkala, Russia
^b Daghestan State University, Makhachkala

Abstract: The capacitance–voltage and conductance–voltage characteristics of InSb-based MIS structures are measured at different probe signal frequencies with the aim of studying the influence exerted by the technological-synthesis conditions on the capacitive properties of these structures. The influence of positive charge built into the insulator on the sample characteristics is discussed. This influence manifests itself as a sharp capacitance “switch” upon changing the polarity of a low-field ($E<$ 10$^6$ V/cm) external signal.

Received: 25.02.2016
Accepted: 25.05.2016

DOI: 10.21883/FTP.2017.03.44212.8220