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JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2017 Volume 51, Issue 3, Pages 367–371 (Mi phts6211)

This article is cited in 7 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Multilayer photosensitive structures based on porous silicon and rare-earth-element compounds: Study of spectral characteristics

N. Yu. Kirsanova, N. V. Latukhinaa, D. A. Lizunkovaa, G. A. Rogozhinaa, M. V. Stepikhovab

a Samara National Research University
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: The spectral characteristics of the specular reflectance, photosensitivity, and photoluminescence (PL) of multilayer structures based on porous silicon with rare-earth-element (REE) ions are investigated. It is shown that the photosensitivity of these structures in the wavelength range of 0.4–1.0 $\mu$m is higher than in structures free of REEs. The structures with Er$^{3+}$ ions exhibit a luminescence response at room temperature in the spectral range from 1.1 to 1.7 $\mu$m. The PL spectrum of the erbium impurity is characterized by a fine line structure, which is determined by the splitting of the $^{4}I_{15/2}$ multiplet of the Er$^{3+}$ ion. It is shown that the structures with a porous layer on the working surface have a much lower reflectance in the entire spectral range under study (0.2–1.0 $\mu$m).

Received: 26.07.2016
Accepted: 12.09.2016

DOI: 10.21883/FTP.2017.03.44209.8377


 English version:
Semiconductors, 2017, 51:3, 353–356

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