N. I. Klyui, V. B. Lozinskii, A. I. Liptuga, V. N. Dikusha, A. P. Oksanych, M. G. Kogdas, A. L. Perekhrest, S. E. Pritchin, “Effect of H<nobr>$^+$</nobr> implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region”, Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 3,Pages <nobr>317

This article is cited in 8 papers

Spectroscopy, interaction with radiation

Effect of H$^+$ implantation on the optical properties of semi-insulating GaAs crystals in the IR spectral region

N. I. Klyui^ab, V. B. Lozinskii^ab, A. I. Liptuga^b, V. N. Dikusha^b, A. P. Oksanych^c, M. G. Kogdas^c, A. L. Perekhrest^c, S. E. Pritchin^c

^a College of Physics, Jilin University, Changchun, China
^b Institute of Semiconductor Physics NAS, Kiev
^c Kremenchuk Mykhailo Ostrohradskyi National University, Kremenchug, Ukraine

Abstract: The optical properties of semi-insulating GaAs crystals subjected to multienergy hydrogen-ion implantation and treatment in a high-frequency electromagnetic field are studied in the infrared spectral region. It is established that such combined treatment provides a means for substantially increasing the transmittance of GaAs crystals to values characteristic of crystals of high optical quality. On the basis of analysis of the infrared transmittance and reflectance data, Raman spectroscopy data, and atomic-force microscopy data on the surface morphology of the crystals, a physical model is proposed to interpret the effects experimentally observed in the crystals. The model takes into account the interaction of radiation defects with the initial structural defects in the crystals as well as the effect of compensation of defect centers by hydrogen during high-frequency treatment.

Received: 12.04.2016
Accepted: 20.04.2016

DOI: 10.21883/FTP.2017.03.44200.8267