This article is cited in 3 papers

Electronic properties of semiconductors

Effect of the energy of bombarding electrons on the conductivity of $n$-4$H$-SiC (CVD) epitaxial layers

V. V. Kozlovsky^a, A. A. Lebedev^b, A. M. Strel'chuk^b, K. S. Davydovskaja^b, A. È. Vasil'ev^a, L. F. Makarenko<sup>c

a</sup> Peter the Great St. Petersburg Polytechnic University
^b Ioffe Institute, St. Petersburg
^c Belarusian State University, Minsk

Abstract: The electrical characteristics of epitaxial layers of $n$-4$H$-SiC (CVD) irradiated with 0.9 and 3.5MeV electrons are studied. It is shown that the donor removal rate becomes nearly four times higher as the energy of impinging electrons increases by a factor of 4, although the formation cross section of primary radiation defects (Frenkel pairs in the carbon sublattice) responsible for conductivity compensation of the material is almost energy independent in this range. It is assumed that the reason for the observed differences is the influence exerted by primary knocked-out atoms. First, cascade processes start to manifest themselves with increasing energy of primary knocked-out atoms. Second, the average distance between genetically related Frenkel pairs grows, and, as a consequence, the fraction of defects that do not recombine under irradiation becomes larger. The recombination radius of Frenkel pairs in the carbon sublattice is estimated and the possible charge state of the recombining components is assessed.

Received: 07.09.2016
Accepted: 14.09.2016

DOI: 10.21883/FTP.2017.03.44199.8399

 English version: Semiconductors, 2017, 51:3, 299–304

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