RUS  ENG
Full version
JOURNALS // Fizika i Tekhnika Poluprovodnikov // Archive

Fizika i Tekhnika Poluprovodnikov, 2017 Volume 51, Issue 3, Pages 302–304 (Mi phts6199)

Electronic properties of semiconductors

Improvement in the accuracy of determining impurity compensation in pure weakly compensated germanium from breakdown-field strength

V. F. Bannaya

Moscow Pedagogical University, Moscow, Russian Federation, Moscow

Abstract: It is shown that measurement of the electric-breakdown field $E_{\operatorname{br}}$ in a classically high magnetic field $(H)$ at $T$ = 4.2 K makes it possible to determine the value of the degree of compensation $K$ in pure germanium with $K<$ 50% much more precisely than at $H$ = 0. The parameter $S=E_{\operatorname{br}}/H$ is introduced and its dependence $S = f(K)$ is calculated; the obtained curve makes it possible to determine $K$ if $H$ and $E_{\operatorname{br}}$ are known. To decrease the resistance of the samples, it is recommended that measurements be carried out under “impurity” illumination. It is shown that the value of $E_{\operatorname{br}}$ is invariable at low intensities of such excitation.

Received: 10.05.2016
Accepted: 16.05.2016

DOI: 10.21883/FTP.2017.03.44197.8315


 English version:
Semiconductors, 2017, 51:3, 290–292

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2026