This article is cited in 1 paper

Manufacturing, processing, testing of materials and structures

Silicon nanowire array architecture for heterojunction electronics

M. M. Solovan^a, V. V. Brus^b, A. I. Mostovyi^a, P. D. Mar'yanchuk^a, I. G. Orletskyi^a, T. T. Kovaliuk^a, S. L. Abashin<sup>c

a</sup> Department of Electronics and Energy Engeneering, Chernivtsi National University, Chernivtsi, Ukraine
^b Institute for Silicon Photovoltaics, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin, Germany
^c Department of Physics, National Aerospace University "Kharkiv Aviation Institute", Kharkiv, Ukraine

Abstract: Photosensitive nanostructured heterojunctions $n$-TiN/$p$-Si were fabricated by means of titanium nitride thin films deposition ($n$-type conductivity) by the DC reactive magnetron sputtering onto nanostructured single crystal substrates of $p$-type Si (100).
The temperature dependencies of the height of the potential barrier and series resistance of the $n$-TiN/$p$-Si heterojunctions were investigated. The dominant current transport mechanisms through the heterojunctions under investigation were determined at forward and reverse bias.
The heterojunctions under investigation generate open-circuit voltage $V_{oc}$ = 0.8 V, short-circuit current $I_{sc}$ = 3.72 mA/cm$^2$ and fill factor $FF$ = 0.5 under illumination of 100 mW/сm$^2$.

Received: 20.09.2016
Accepted: 29.09.2016

Language: English

DOI: 10.21883/FTP.2017.04.44354.8407

 English version: Semiconductors, 2017, 51:4, 542–548

Bibliographic databases:

•