This article is cited in 2 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Alloyed Si/Al-based ohmic contacts to AlGaN/GaN nitride heterostructures

D. N. Slapovskiy^ab, A. Yu. Pavlov^b, V. Yu. Pavlov^b, A. V. Klekovkin<sup>bc

a</sup> Institute of Microelectronics Technology and High-Purity Materials RAS, Chernogolovka, Moscow oblast, Russia
^b Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow
^c P. N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow

Abstract: For the first time in Russia, the Si/Al/Ti/Au alloyed contact composition is investigated for the formation of ohmic contacts to AlGaN/GaN heterostructures using thermal annealing. The obtained results are compared with those for conventional Ti/Al/Ni/Au ohmic contacts. Use of the composition under investigation makes it possible to decrease the annealing temperature to 675–700$^\circ$C, which results in improvement in the morphology of alloyed ohmic contacts in comparison with conventional contacts. The value of the contact resistance using the Si/Al-based composition to the AlGaN/GaN heterostructure is obtained in relation to the temperature and annealing duration. It is shown that no qualitative change in the resistance occurs at an annealing duration of several minutes in the temperature range of 700–750$^\circ$C. In the temperature range of 675–700$^\circ$C, there is an asymptotic decrease in the contact resistance with increasing annealing duration. The smallest value of the contact resistance amounts to 0.41 $\Omega$ mm.

Received: 28.09.2016
Accepted: 07.10.2016

DOI: 10.21883/FTP.2017.04.44336.8418

 English version: Semiconductors, 2017, 51:4, 438–443

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