A. S. Kozhukhov, D. V. Shcheglov, A. V. Latyshev, “Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe”, Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 4,Pages <nobr>443

This article is cited in 2 papers

Surface, interfaces, thin films

Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe

A. S. Kozhukhov^ab, D. V. Shcheglov^a, A. V. Latyshev^a

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University

Abstract: A technique for reversible surface modification with an atomic-force-microscope (AFM) probe is suggested. In this method, no significant mechanical or topographic changes occur upon a local variation in the surface potential of a sample under the AFM probe. The method allows a controlled relative change in the ohmic resistance of a channel in a Hall bridge within the range 20–25%.

Received: 27.10.2015
Accepted: 26.09.2016

DOI: 10.21883/FTP.2017.04.44333.8089